This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...
Some diode manufacturers caution against using the diode tester function in ohmmeters because it could exceed the reverse-voltage and forward-current ratings of sensitive diodes. This is especially ...
Vishay Intertechnology, Inc. released a new bidirectional and symmetrical (BiAs) single-line ESD protection diode for portable electronics that provides a reverse avalanche breakdown voltage above ...
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