AOS’ AOTL037V60DE2 600V MOSFET is designed to meet the growing demand for high efficiency and high-power density across a ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K ...

SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Durham, NC, April X, 2013 — Cree, Inc. (Nasdaq: CREE) and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta’s new generation of solar ...