KYOTO, Japan — Magneto-resistive random access memory (MRAM) technology continues to pick up critical momentum, with the MRAM Alliance between IBM and Infineon Technologies announcing prototype ...
TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded ...
At the recent 2020 Symposia on VLSI Technology and Circuits, Intel presented a paper on a CMOS-compatible spin-orbit torque MRAM (SOT-MRAM) device. Still in R&D, SOT-MRAM is a next-generation MRAM ...
Imec will use this year’s 2018 Symposia on VLSI Technology and Circuits, to demonstrate for the first time the possibility of fabricating state-of-the-art spin-orbit torque MRAM (SOT-MRAM) devices on ...
Professor Tetsuo Endoh, leading a group of researchers at Tohoku University, has announced the development of an MTJ (Magnetic Tunnel Junction) with 10 ns high-speed write operation, sufficient ...
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