LARGO, FL — Res-net Microwave Inc., a subsidiary of Electro Technik Industries, Inc., is introducing a miniature zero-bias Schottky diode detector to their current line of microwave and RF ...
Atomic Force Microscopy (AFM) showed that stepped terrace structures dominated at low doping levels, while increasing silicon ...
ON Semiconductor has introduced four new 30 V Schottky barrier diodes that have been developed to offer portable electronics designers both the industry's smallest Schottky diode and best-in-class ...
Cree Inc. announces a series of packaged diodes that deliver one of the highest blocking voltages available in SiC Schottky technology. Cree Inc. announces a series of packaged diodes that deliver one ...
Expanded portfolio includes 178 devices in total, covering a wide range of end products In response, ROHM has strengthened its lineup of SBDs that balances small size with low V F and I R – ...
MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Cree, Inc., a market leader in silicon carbide (SiC) power devices, announces a new family of silicon carbide (SiC) Schottky diodes optimized for performance. Cree is advancing the adoption of silicon ...
Cree Inc. announces a series of packaged diodes that deliver what is reportedly the industry’s highest blocking voltage available in SiC Schottky technology. Cree Inc. announces a series of packaged ...
The entire 178-product lineup contributes to lower power consumption, smaller size, and higher reliability in a wider range of applications Santa Clara, CA and Kyoto, Japan, Nov. 02, 2021 (GLOBE ...
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