Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current silicon-based technology. Electronic diodes require two types of ...

Japanese researchers from the Nagoya University solved technological difficulties, using gallium oxide (Ga₂O₃) in semiconductors. Gallium oxide is a promising material, can make electronic devices ...

IIT Guwahati has released the GATE ECE Syllabus for Electronics and Communication Engineering with the official brochure. Get the direct link to download the GATE ECE syllabus PDF on this page.

Chinese module producer DAS Solar is planning a 5GW manufacturing facility focused on producing high-efficiency back contact ...

Researchers at Nagoya University in Japan have created the first functional pn diodes using Ga 2 O 3. Their method 'P-type layer formation study for Ga 2 O 3 by employing Ni ion implantation with ...

Abstract: In this letter, a high performance quasi-vertical GaN-on-Si Schottky barrier diode (SBD) was fabricated by combing in-situ p-GaN layer with hydrogen plasma treatment and controlled diffusion ...

Illustration of the new fabrication process: ion implantation of nickel atoms, followed by low-temperature plasma treatment and high-temperature annealing (heating) to create stable p-type layers in ...

Abstract: This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride (GaN) devices. Viable edge ...

At 34 years old, Zhao Baodan has overcome numerous obstacles to explore the application of a new type of semiconductor ...

IIT Guwahati has officially released the GATE 2026 syllabus and exam pattern for all subjects on its website. About 85% of ...

Adjuvant chemoradiotherapy has a proven survival benefit for patients undergoing upfront resection of gastric cancer compared with surgery alone. Now, data from the TOPGEAR trial demonstrate that ...